MAGNETIC AND ELECTRIC FIELD DEPENDENT CHARGE TRANSFER IN PEROVSKITE/ GRAPHENE FIELD EFFECT TRANSISTORS
Walter Escoffier, Michel Goiran, Mathieu Pierre, LNCMI Toulouse, and Oleg Makarovsky, University of Nottingham, UK. Perovskite/graphene field effect transistors (FETs) have garnered substantial attention owing to their unique optical properties and potential for applications in electronics and optoelectronics, including ultra-sensitive photon detectors and FETs for metrology. The charge-transfer processes at [...]