M. van Delft, S. Pezzini, T. Khouri, C. Müller, N. Hussey, S. Wiedmann, HFML Nijmegen. Researchers from Germany, USA, UK, and the HFML Nijmegen have found evidence for electron-hole tunneling in momentum space in the nodal-line semimetal HfSiS. This specific tunneling phenomenon is revealed in quantum oscillations of the electrical resistance at low temperatures and in high magnetic fields, and can be illustrated as a ‘figure-of-eight orbit’ enclosing one electron and one hole pocket.

Cyril Proust, LNCMI-Toulouse and Louis Taillefer, University of Sherbrooke. Measuring the electrical resistance of a new material is often the first experiment that researchers do, but also often the last to be understood. Nevertheless, the temperature dependence of the electrical resistance gives essential information on the ground state of materials.

Electrons are one of the fundamental constituents of solids, responsible for most of the important phenomena and applications in condensed matter physics. Therefore, understanding, controlling and manipulating electronic properties [...]

Zhe Wang, HZDR and S. Zherlitsyn, HLD Dresden Understanding quantum phase transitions, i.e., phase transitions at zero temperature driven by non-thermal parameters, has become one of the most significant [...]

Sergio Pezzini & Uli Zeitler, HFML Nijmegen Using high magnetic-magnetic fields, the Bloch states in two-dimensional graphene superlattices can be influenced in a way that adding fractions of flux [...]

Layered materials can realize different stackings of their individual planes, different polytypes, to compose three-dimensional structures. ABA-stacked graphite is the most stable form of graphite at ambient [...]